Piezoelectric quantum 1/f noise in nitride-based heterostructures

Peter H. Handel; Hadis Morkoc; Engkee Sia; Amanda M. Truong

doi:10.1117/12.762387

28 February 2008 Piezoelectric quantum 1/f noise in nitride-based heterostructures

Peter H. Handel, Hadis Morkoc, Engkee Sia, Amanda M. Truong

Proceedings Volume 6894, Gallium Nitride Materials and Devices III; 68941N (2008) https://doi.org/10.1117/12.762387
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

There are as many types of quantum 1/f noise [1], [2], as there are systems of massless infraquanta with infrared-divergent coupling to the current carriers. Each of these types has a conventional and coherent part, corresponding to terms in the hamiltonian that are proportional with the first and second power of the number of carriers defining the current, respectively. In piezoelectric materials, particularly those also showing ferroelectric spontaneous polarization, transversal phonons are the massless quanta leading to piezoelectric, or lattice-dynamic, quantum 1/f effects, again both conventional and coherent. As in the usual QED case, the observable 1/f noise is approximated by a weighted sum of the conventional and coherent quantum 1/f effects. The sum involves the coherence parameter, this time denoted by s', in the weight factors. The parameter s' is also estimated from first principles. The general formula involving s' is applied to bulk GaN and AlGaN grown with different methods, and includes the dependence on stress and polarization. It also includes the dependence on stress and the geometry of the sample. It is important both for reliability testing and for general device optimization.

Citation Download Citation

Peter H. Handel, Hadis Morkoc, Engkee Sia, and Amanda M. Truong "Piezoelectric quantum 1/f noise in nitride-based heterostructures", Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68941N (28 February 2008); https://doi.org/10.1117/12.762387

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