Paper
28 February 2008 Recent progress of GaN electronic devices for wireless communication system
T. Kikkawa, K. Imanishi, N. Hara, H. Shigematsu, K. Joshin
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Abstract
We report a current status of high-power GaN HEMTs for high-power and high-efficiency amplifiers with higher efficiency by 5% especially at a backed-off region than the conventional GaN HEMTs. First, we introduce our specific device structure GaN HEMT with dispersion-free I-V characteristics, low Idsq-drift and high reliability. Record average drain efficiency of over 50% and linear gain of 17.2 dB were obtained at an output power of 45 dBm and 2.5 GHz. Next, we discuss their reliability with high-temperature life tests resulting in their estimated life of over 1 x 106 hours at Tj of 200 °C. High-k insulated gate HEMTs using Ta2O5 were also developed. Finally, we describe the next generation GaN HEMTs for millimeter-wave applications.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Kikkawa, K. Imanishi, N. Hara, H. Shigematsu, and K. Joshin "Recent progress of GaN electronic devices for wireless communication system", Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68941Q (28 February 2008); https://doi.org/10.1117/12.772152
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CITATIONS
Cited by 8 scholarly publications.
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KEYWORDS
Gallium nitride

Field effect transistors

Amplifiers

Reliability

Telecommunications

Silicon carbide

Electrodes

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