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15 February 2008 AlGaN/SiC heterojunction bipolar transistor
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Abstract
AlGaN/6H-SiC heterojunction bipolar transistors (HBTs) were fabricated, and the device performance as well as the electrical properties of the n-AlGaN/p-SiC heterojunction were studied by temperature dependent current-voltage characterization. Current gain β=IC/IB calculated from I-V characteristics varied from sample to sample in the range of 75-100. A barrier height of 1.1 eV is derived from the Arrhenius plot and its origin is discussed.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ya. I. Alivov, Q. Fan, X. Ni, S. Chevtchenko, I. B. Bhat, and H. Morkoç "AlGaN/SiC heterojunction bipolar transistor", Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68941W (15 February 2008); https://doi.org/10.1117/12.763143
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