Ge photodetectors integrated in CMOS photonic circuits

G. Masini; S. Sahni; G. Capellini; J. Witzens; J. White; D. Song; C. Gunn

doi:10.1117/12.767035

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26 February 2008 Ge photodetectors integrated in CMOS photonic circuits

G. Masini, S. Sahni, G. Capellini, J. Witzens, J. White, D. Song, C. Gunn

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Proceedings Volume 6898, Silicon Photonics III; 689808 (2008) https://doi.org/10.1117/12.767035
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

We describe our approach to the monolithic integration of Ge photodetectors in a photonics-enabled CMOS technology. Ge waveguide photodetectors allow fast and efficient conversion of optical signals in the near infrared (1.55μm) to the electrical domain thus enabling the fabrication of compact, high speed (10Gbps) receivers.

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G. Masini, S. Sahni, G. Capellini, J. Witzens, J. White, D. Song, and C. Gunn "Ge photodetectors integrated in CMOS photonic circuits", Proc. SPIE 6898, Silicon Photonics III, 689808 (26 February 2008); https://doi.org/10.1117/12.767035

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