Efficient silicon-photonic modulator with recessed electrodes

D. W. Zheng; B. T. Smith; M. Asghari

doi:10.1117/12.764419

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13 February 2008 Efficient silicon-photonic modulator with recessed electrodes

D. W. Zheng, B. T. Smith, M. Asghari

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Proceedings Volume 6898, Silicon Photonics III; 68980A (2008) https://doi.org/10.1117/12.764419
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

A Si ridge waveguide integrated with a lateral p-i-n diode forms a basic optical amplitude and phase modulator. An efficient Si modulator is expected to establish a carrier concentration in the waveguide with a minimum amount of electrical drive power. We show that P⁺ and N⁺ doping sections that are recessed below the slab lead to lower power consumption. This configuration is compared with alternative doping section arrangements. The optimum arrangement results in less Si active area and reduced carrier recombination.

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D. W. Zheng, B. T. Smith, and M. Asghari "Efficient silicon-photonic modulator with recessed electrodes", Proc. SPIE 6898, Silicon Photonics III, 68980A (13 February 2008); https://doi.org/10.1117/12.764419

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