Stark effect at dislocations in silicon for modulation of a 1.5-µm light emitter

Martin Kittler; Manfred Reiche; Teimuraz Mchedlidze; Tzanimir Arguirov; Guobin Jia; Winfried Seifert; Stephan Suckow; Thomas Wilhelm

doi:10.1117/12.773295

13 February 2008 Stark effect at dislocations in silicon for modulation of a 1.5 μm light emitter

Martin Kittler, Manfred Reiche, Teimuraz Mchedlidze, Tzanimir Arguirov, Guobin Jia, Winfried Seifert, Stephan Suckow, Thomas Wilhelm

Author Affiliations +

Proceedings Volume 6898, Silicon Photonics III; 68980G (2008) https://doi.org/10.1117/12.773295
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

A MOS-LED and a p-n LED emitting based on the dislocation-related luminescence (DRL) at 1.5 micron were already demonstrated by the authors. Here we report recent observation of the Stark effect for the DRL in Si. Namely, a red/blue-shift of the DRL peak positions was observed in electro- and photo-luminescence when the electric field in the pn-LED was increased/lowered. Fitting the experimental data yields a strong characteristic coefficient of 0.0186 meV/(kV/cm)². This effect may allow realization of a novel Si-based emitter and modulator combined in a single device.

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Martin Kittler, Manfred Reiche, Teimuraz Mchedlidze, Tzanimir Arguirov, Guobin Jia, Winfried Seifert, Stephan Suckow, and Thomas Wilhelm "Stark effect at dislocations in silicon for modulation of a 1.5 μm light emitter", Proc. SPIE 6898, Silicon Photonics III, 68980G (13 February 2008); https://doi.org/10.1117/12.773295

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