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13 February 2008 Integrated AlGaInAs-silicon evanescent racetrack laser and photodetector
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Recently, AlGaInAs-silicon evanescent lasers have been demonstrated as a method of integrating active photonic devices on a silicon based platform. This hybrid waveguide architecture consists of III-V quantum wells bonded to silicon waveguides. The self aligned optical mode leads to a bonding process that is manufacturable in high volumes. Here give an overview of a racetrack resonator laser integrated with two photo-detectors on the hybrid AlGaInAs-silicon evanescent device platform. Unlike previous demonstrations of hybrid AlGaInAs-silicon evanescent lasers, we demonstrate an on-chip racetrack resonator laser that does not rely on facet polishing and dicing in order to define the laser cavity. The laser runs continuous-wave (c.w.) at 1590 nm with a threshold of 175 mA, has a maximum total output power of 29 mW and a maximum operating temperature of 60 C. The output of this laser light is directly coupled into a pair of on chip hybrid AlGaInAs-silicon evanescent photodetectors used to measure the laser output.
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Alexander W. Fang, Richard Jones, Hyundai Park, Oded Cohen, Omri Raday, Mario J. Paniccia, and John E. Bowers "Integrated AlGaInAs-silicon evanescent racetrack laser and photodetector", Proc. SPIE 6898, Silicon Photonics III, 68980M (13 February 2008);

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