Photon confinement in multi-slot waveguides

Yijing Fu; Han G. Yoo; Dan Riley; Philippe M. Fauchet

doi:10.1117/12.767480

26 February 2008 Photon confinement in multi-slot waveguides

Yijing Fu, Han G. Yoo, Dan Riley, Philippe M. Fauchet

Proceedings Volume 6898, Silicon Photonics III; 68980P (2008) https://doi.org/10.1117/12.767480
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

Recent research progresses in slot waveguide have shown that it is possible to achieve photon confinement in low-refractive index region with nm thickness. To utilize this photon confinement, we propose a multilayer waveguide that could be the optimum design for future silicon light emission devices. Our device consists of multiple alternating layers of Si and SiO₂ with nm thickness, which can be easily fabricated. Both transfer matrix method (TMM) and FDTD simulation are used to simulate the performance of this device. We calculated the propagation mode index, and photon confinement in SiO₂ layers. Birefringence as high as 0.8 is achieved with moderate design parameters, although a homogeneous slab waveguide also shows some birefringence, it cannot account for the high birefringence we have calculated. Thus it indirectly indicates that for TM polarization photons are actually confined in SiO₂ layers, where the refractive index is lower. Also our photon confinement simulation shows that, for a structure with multilayer region thickness of 0.52 μm, photon confinement in SiO₂ layers as high as 75% can be achieved with Si/SiO₂ layer thickness ratio close to 1. We fabricated a few multilayer samples with different Si/SiO₂ thickness ratios and performed M-line measurement to measure the propagation mode index. The measurement results agrees well with our simulate results, indicates that for TM polarization photons can be strongly confined in SiO₂ layers in this multilayer structure. Thanks to this high confinement in SiO₂ layers, this structure could be an excellent choice for future silicon light emitting devices.

Citation Download Citation

Yijing Fu, Han G. Yoo, Dan Riley, and Philippe M. Fauchet "Photon confinement in multi-slot waveguides", Proc. SPIE 6898, Silicon Photonics III, 68980P (26 February 2008); https://doi.org/10.1117/12.767480

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KEYWORDS

Silicon

Waveguides

Information operations

Birefringence

Finite-difference time-domain method

Photon polarization

Polarization

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