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13 February 2008 An all-silicon channel waveguide fabricated using direct proton beam writing
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We report a novel technique for the fabrication of an all-silicon channel waveguide using direct proton beam writing and subsequent electrochemical etching. A focused beam of high energy protons is used to selectively inhibit porous silicon formation in the irradiated regions. By over-etching beyond the ion range, the irradiated region becomes surrounded by porous silicon cladding. Waveguide characterization carried out at 1550 nm on the proton irradiated waveguide shows that the propagation losses improve significantly from 20±2 dB/cm to 9±2 dB/cm after vacuum annealing at 800°C for 1 hour.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. J. Teo, A. A. Bettiol, M. B. H. Breese, P. Y. Yang, G. Z. Mashanovich, W. R. Headley, G. T. Reed, and D. J. Blackwood "An all-silicon channel waveguide fabricated using direct proton beam writing", Proc. SPIE 6898, Silicon Photonics III, 68980Q (13 February 2008);

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