Hybrid silicon evanescent photodetectors

Hyundai Park; John E. Bowers

doi:10.1117/12.767568

13 February 2008 Hybrid silicon evanescent photodetectors

Hyundai Park, John E. Bowers

Proceedings Volume 6898, Silicon Photonics III; 689816 (2008) https://doi.org/10.1117/12.767568
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

We present hybrid silicon evanescent photodetectors that utilize silicon waveguides and offset AlGaInAs quantum wells. The light in the hybrid waveguide is absorbed by the AlGaInAs quantum wells under reverse bias. The first demonstrated photodetector had an internal quantum efficiency of >90 % over the 1.5 μm wavelength regime. This detector structure has the same structure as silicon evanescent lasers and amplifiers leading to easy integration for power monitors and preamplified receivers. A pre-amplified receiver implementing a hybrid silicon evanescent amplifier and a hybrid silicon evanescent waveguide photodetector is also presented in this paper. The integrated device operates at 1550 nm with a responsivity of 5.7 A/W and a receiver sensitivity of -17.5 dBm at 2.5 Gb/s.

Citation Download Citation

Hyundai Park and John E. Bowers "Hybrid silicon evanescent photodetectors", Proc. SPIE 6898, Silicon Photonics III, 689816 (13 February 2008); https://doi.org/10.1117/12.767568

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available