Paper
12 February 2008 Theory of luminescence and optical refrigeration in p-doped semiconductors
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Abstract
We present a microscopic many-body theory of optical refrigeration of p-doped semiconductors. Conceptually, the refrigeration mechanism is the upconversion of pump photons through absorption and subsequent luminescence by electron-hole pairs. The electron-hole pair can be an unbound pair, a pair bound by the attractive Coulomb interation (exciton), or a pair in which the hole is located at an acceptor site. Assuming the electron-hole pairs to be in quasi-thermal equilibrium, our theory calculates its absorption and luminescence spectra within a diagrammatic (real-time) Green's function approach at the self-consistent T-matrix level. The strong on-site Coulomb repulsion of holes at acceptor sites is taken into account via a truncation of the acceptor Fock space, which excludes states with higher than single-hole occupation. The resulting absorption and luminescence spectra are used in a cooling threshold analysis for GaAs that also takes into account other losses into heat. We compare the present results for p-doped GaAs with previous ones obtained for undoped GaAs.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Rupper, N. H. Kwong, B. Gu, and R. Binder "Theory of luminescence and optical refrigeration in p-doped semiconductors", Proc. SPIE 6907, Laser Refrigeration of Solids, 690705 (12 February 2008); https://doi.org/10.1117/12.765276
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Cited by 5 scholarly publications.
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KEYWORDS
Sodium

Luminescence

Gallium arsenide

Semiconductors

Absorption

Excitons

Photons

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