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29 January 2008 High performance 1.3 μm GaInNAs quantum well lasers on GaAs
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Abstract
We present state-of-the-art performance of 1.3 μm GaInNAs lasers on GaAs grown by molecular beam epitaxy. The lowest achieved threshold current density is 297, 150 and 133 A/cm2 per quantum well (QW) for single, double and triple QW broad area lasers with a cavity length of 1 mm. The characteristic temperature is 93-133 K in the ambient temperature range of 10-80 °C for broad area lasers depending on the cavity length, and increases to 163-208 K for ridge waveguide lasers as a result of temperature insensitive lateral carrier diffusion in QWs. The maximum 3 dB bandwidth of 17 GHz is achieved in a double QW laser. Uncooled 10 Gb/s operation up to 110 °C has been demonstrated.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. M. Wang, G. Adolfsson, H. Zhao, Y. Q. Wei, J. S. Gustavsson, M. Sadeghi, and A. Larsson "High performance 1.3 μm GaInNAs quantum well lasers on GaAs", Proc. SPIE 6909, Novel In-Plane Semiconductor Lasers VII, 690905 (29 January 2008); https://doi.org/10.1117/12.766357
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