Paper
31 January 2008 Low-noise monolithic mode-locked semiconductor lasers through low-dimensional structures
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Abstract
The design of a quantum well (QW) based high-saturation energy and low-loss gain region allows a high power density which ensures efficient saturation of the absorber, increases the efficiency, and lowers the noise of monolithic modelocked lasers. This is illustrated though 10 GHz all-active lasers with different number of quantum wells. By comparing a 40 GHz quantum dot and a 40 GHz quantum well laser we discuss the physical difference in the dynamics of the devices. The slow dynamics of quantum dots (QD), results in low self-phase modulation for picosecond pulses and a strong damping of intensity fluctuations, which gives rise to clean optical spectra and very low noise for passive mode-locking.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kresten Yvind, David Larsson, Jesper Mørk, Jørn M. Hvam, Mark Thompson, Richard Penty, and Ian White "Low-noise monolithic mode-locked semiconductor lasers through low-dimensional structures", Proc. SPIE 6909, Novel In-Plane Semiconductor Lasers VII, 69090A (31 January 2008); https://doi.org/10.1117/12.768641
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Cited by 11 scholarly publications.
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KEYWORDS
Quantum wells

Mode locking

Quantum dots

Semiconductor lasers

Modulation

Picosecond phenomena

Pulsed laser operation

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