Interband cascade laser progress

W. W. Bewley; C. L. Canedy; M. Kim; C. S. Kim; J. A. Nolde; D. C. Larrabee; J. R. Lindle; I. Vurgaftman; J. R. Meyer

doi:10.1117/12.766908

29 January 2008 Interband cascade laser progress

W. W. Bewley, C. L. Canedy, M. Kim, C. S. Kim, J. A. Nolde, D. C. Larrabee, J. R. Lindle, I. Vurgaftman, J. R. Meyer

Proceedings Volume 6909, Novel In-Plane Semiconductor Lasers VII; 69090X (2008) https://doi.org/10.1117/12.766908
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

Recent advances in the development of mid-IR antimonide type-II "W" interband cascade lasers have led to a considerably improved high-temperature operation of the devices. We report an experimental investigation of four interband cascade lasers with wavelengths spanning the mid-infrared spectral range, i.e., 2.9-5.2 μm near room temperature in pulsed mode. One broad-area device had a pulsed threshold current density of only 3.8 A/cm at 78 K (λ = 3.6 μm) and 590 A/cm² at 300 K (λ = 4.1 μm). The room-temperature threshold for the shortest-wavelength device (λ = 2.6-2.9 μm) was even lower, 450 A/cm². A cavity-length study of the lasers emitting at 3.6-4.1 μm yielded an internal loss varying from 7.8 cm^-1 at 78 K to 24 cm^-1 at 300 K, accompanied by a decrease of the internal efficiency from 77% to 45%. Preliminary cw testing led to a narrow-ridge device from one of the wafers with emission at λ = 4.1 μm operating to 288 K, a new record for interband devices in this wavelength range.

Citation Download Citation

W. W. Bewley, C. L. Canedy, M. Kim, C. S. Kim, J. A. Nolde, D. C. Larrabee, J. R. Lindle, I. Vurgaftman, and J. R. Meyer "Interband cascade laser progress", Proc. SPIE 6909, Novel In-Plane Semiconductor Lasers VII, 69090X (29 January 2008); https://doi.org/10.1117/12.766908

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