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13 February 2008 Submicron-thick microcavity InGaN light emitting diodes
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Abstract
We report on submicron-thick microcavity light emitting diodes (MCLEDs) emitting at the wavelengths of 415 nm ~ 460 nm. These devices were fabricated by flip-chip-bonding, laser lift-off, and thinning processes. Growth of a highquality AlxGa1-xN interlayer and etch selectivity between N-face GaN and AlxGa1-xN allowed high-precision control of microcavity thickness, resulting in controlled microcavity effects. Single Fabry-Pérot modes confined in 2λ ~ 2.5λ-thick MCLEDs gave rise to characteristic angular emission, in contrast to a Lambertian emission. High current operation (~100 mA) showed robustness of these thin devices with promising the possibility of high-brightness application. We will discuss design and processing issues regarding photonic-crystal integration towards higher improvements in light extraction efficiency.
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Yong-Seok Choi, Michael Iza, Elison Matioli, Gregor Koblmüller, James S. Speck, Claude Weisbuch, and Evelyn L. Hu "Submicron-thick microcavity InGaN light emitting diodes", Proc. SPIE 6910, Light-Emitting Diodes: Research, Manufacturing, and Applications XII, 69100R (13 February 2008); https://doi.org/10.1117/12.764696
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