Paper
18 March 2008 High resolution amplified pixel sensor architectures for large area digital mammography tomosynthesis
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Abstract
Amplified Pixel Sensor (APS) architectures using two transistors per pixel are introduced in this research for digital mammography tomosynthesis that requires high resolution and low noise imaging capability. The fewer number of on-pixel elements and reduced pixel complexity result in a smaller pixel pitch and higher gain, which makes the two-transistor (2T) APS architectures promising for high resolution, low noise and high speed digital imaging including medical imaging modalities such as tomosynthesis and cone beam computed tomography. Measured results from in-house fabricated test arrays using amorphous silicon (a-Si) thin film transistor (TFTs) are presented as well as driving schemes for minimizing the threshold voltage metastability problem and increasing frame rate. The results indicate that a pixel input referred noise value of down to 220 electrons is achievable with a 50μm pixel pitch a-Si 2T APS.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Farhad Taghibakhsh and Karim S. Karim "High resolution amplified pixel sensor architectures for large area digital mammography tomosynthesis", Proc. SPIE 6913, Medical Imaging 2008: Physics of Medical Imaging, 69133R (18 March 2008); https://doi.org/10.1117/12.769842
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Cited by 2 scholarly publications.
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KEYWORDS
Sensors

Capacitance

Transistors

Amplifiers

Amorphous silicon

Image resolution

Switching

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