Paper
21 March 2008 Performance of the full field EUV systems
Hans Meiling, Edwin Boon, Nico Buzing, Kevin Cummings, Olav Frijns, Judy Galloway, Mieke Goethals, Noreen Harned, Bas Hultermans, Roel de Jonge, Bart Kessels, Peter Kürz, Sjoerd Lok, Martin Lowisch, Joerg Mallman, Bill Pierson, Kurt Ronse, James Ryan, Emil Smitt-Weaver, Michael Tittnich, Christian Wagner, Andre van Dijk, John Zimmerman
Author Affiliations +
Abstract
The ASML extreme ultraviolet lithography (EUV) alpha demo tool is a 0.25NA fully functional lithography tool with a field size of 26×33 mm2, enabling process development for sub-40-nm technology. Two exposure tools are installed at customer facilities, and are equipped with a Sn discharge source. In this paper we present data measured at intermediate focus of the Sn source-collector module. We also present performance data from both exposure tools, show the latest results of resist exposures including excellent 32-nm half pitch dense staggered and aligned contact hole images, and present the highlights of the first demonstration of an electrically functional full field device with one of the layers made using EUVL in ASML's alpha demo tool.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hans Meiling, Edwin Boon, Nico Buzing, Kevin Cummings, Olav Frijns, Judy Galloway, Mieke Goethals, Noreen Harned, Bas Hultermans, Roel de Jonge, Bart Kessels, Peter Kürz, Sjoerd Lok, Martin Lowisch, Joerg Mallman, Bill Pierson, Kurt Ronse, James Ryan, Emil Smitt-Weaver, Michael Tittnich, Christian Wagner, Andre van Dijk, and John Zimmerman "Performance of the full field EUV systems", Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69210L (21 March 2008); https://doi.org/10.1117/12.773259
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Cited by 17 scholarly publications.
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KEYWORDS
Extreme ultraviolet

Tin

Extreme ultraviolet lithography

Semiconducting wafers

Mirrors

Printing

Sensors

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