The use of EUV lithography to produce demonstration devices

Bruno LaFontaine; Yunfei Deng; Ryoung-Han Kim; Harry J. Levinson; Sarah McGowan; Uzodinma Okoroanyanwu; Rolf Seltmann; Cyrus Tabery; Anna Tchikoulaeva; Tom Wallow; Obert Wood; John Arnold; Don Canaperi; Matthew Colburn; Kurt Kimmel; Chiew-Seng Koay; Erin Mclellan; Dave Medeiros; Satyavolu Papa Rao; Karen Petrillo; Yunpeng Yin; Hiroyuki Mizuno; Sander Bouten; Michael Crouse; Andre van Dijk; Youri van Dommelen; Judy Galloway; Sang-In Han; Bart Kessels; Brian Lee; Sjoerd Lok; Brian Niekrewicz; Bill Pierson; Robert Routh; Emil Schmit-Weaver; Kevin Cummings; James Word

doi:10.1117/12.772933

26 March 2008 The use of EUV lithography to produce demonstration devices

Bruno LaFontaine, Yunfei Deng, Ryoung-Han Kim, Harry J. Levinson, Sarah McGowan, Uzodinma Okoroanyanwu, Rolf Seltmann, Cyrus Tabery, Anna Tchikoulaeva, Tom Wallow, Obert Wood, John Arnold, Don Canaperi, Matthew Colburn, Kurt Kimmel, Chiew-Seng Koay, Erin Mclellan, Dave Medeiros, Satyavolu Papa Rao, Karen Petrillo, Yunpeng Yin, Hiroyuki Mizuno, Sander Bouten, Michael Crouse, Andre van Dijk, Youri van Dommelen, Judy Galloway, Sang-In Han, Bart Kessels, Brian Lee, Sjoerd Lok, Brian Niekrewicz, Bill Pierson, Robert Routh, Emil Schmit-Weaver, Kevin Cummings, James Word

Author Affiliations +

Proceedings Volume 6921, Emerging Lithographic Technologies XII; 69210P (2008) https://doi.org/10.1117/12.772933
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

In this paper, we describe the integration of EUV lithography into a standard semiconductor manufacturing flow to produce demonstration devices. 45 nm logic test chips with functional transistors were fabricated using EUV lithography to pattern the first interconnect level (metal 1). This device fabrication exercise required the development of rule-based 'OPC' to correct for flare and mask shadowing effects. These corrections were applied to the fabrication of a full-field mask. The resulting mask and the 0.25-NA fullfield EUV scanner were found to provide more than adequate performance for this 45 nm logic node demonstration. The CD uniformity across the field and through a lot of wafers was 6.6% (3σ) and the measured overlay on the test-chip (product) wafers was well below 20 nm (mean + 3σ). A resist process was developed and performed well at a sensitivity of 3.8 mJ/cm², providing ample process latitude and etch selectivity for pattern transfer. The etch recipes provided good CD control, profiles and end-point discrimination, allowing for good electrical connection to the underlying levels, as evidenced by electrical test results. Many transistors connected with Cu-metal lines defined using EUV lithography were tested electrically and found to have characteristics very similar to 45 nm node transistors fabricated using more traditional methods.

Citation Download Citation

Bruno LaFontaine, Yunfei Deng, Ryoung-Han Kim, Harry J. Levinson, Sarah McGowan, Uzodinma Okoroanyanwu, Rolf Seltmann, Cyrus Tabery, Anna Tchikoulaeva, Tom Wallow, Obert Wood, John Arnold, Don Canaperi, Matthew Colburn, Kurt Kimmel, Chiew-Seng Koay, Erin Mclellan, Dave Medeiros, Satyavolu Papa Rao, Karen Petrillo, Yunpeng Yin, Hiroyuki Mizuno, Sander Bouten, Michael Crouse, Andre van Dijk, Youri van Dommelen, Judy Galloway, Sang-In Han, Bart Kessels, Brian Lee, Sjoerd Lok, Brian Niekrewicz, Bill Pierson, Robert Routh, Emil Schmit-Weaver, Kevin Cummings, and James Word "The use of EUV lithography to produce demonstration devices", Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69210P (26 March 2008); https://doi.org/10.1117/12.772933

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