Paper
21 March 2008 EUV mask reflectivity measurements with micron-scale spatial resolution
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Abstract
The effort to produce defect-free mask blanks for EUV lithography relies on increasing the detection sensitivity of advanced mask inspection tools, operating at several wavelengths. We describe the unique measurement capabilities of a prototype actinic (EUV wavelength) microscope that is capable of detecting small defects and reflectivity changes that occur on the scale of microns to nanometers. The defects present in EUV masks can appear in many well-known forms: as particles that cause amplitude or phase variations in the reflected field; as surface contamination that reduces reflectivity and contrast; and as damage from inspection and use that reduces the reflectivity of the multilayer coating. This paper presents an overview of several topics where scanning actinic inspection makes a unique contribution to EUVL research. We describe the role of actinic scanning inspection in defect repair studies, observations of laser damage, actinic inspection following scanning electron microscopy, and the detection of both native and programmed defects.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kenneth A. Goldberg, Senajith B. Rekawa, Charles D. Kemp, Anton Barty, Erik Anderson, Patrick Kearney, and Hakseung Han M.D. "EUV mask reflectivity measurements with micron-scale spatial resolution", Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69213U (21 March 2008); https://doi.org/10.1117/12.772971
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Cited by 7 scholarly publications.
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KEYWORDS
Reflectivity

Inspection

Photomasks

Extreme ultraviolet

Scanning electron microscopy

Signal detection

Signal to noise ratio

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