Challenges of implementing contour modeling in 32nm technology

Daniel Fischer; Geng Han; James Oberschmidt; Yong Wah Cheng; Jae Yeol Maeng; Charles Archie; Wei Lu; Cyrus Tabery

doi:10.1117/12.775444

22 March 2008 Challenges of implementing contour modeling in 32nm technology

Daniel Fischer, Geng Han, James Oberschmidt, Yong Wah Cheng, Jae Yeol Maeng, Charles Archie, Wei Lu, Cyrus Tabery

Proceedings Volume 6922, Metrology, Inspection, and Process Control for Microlithography XXII; 69220A (2008) https://doi.org/10.1117/12.775444
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

Optical Proximity Correction (OPC) Model Calibration has required an increasing number of measurements as the critical dimension tolerances have gotten smaller. Measurement of two dimensional features have been increasing at a faster rate than features with one dimensional character as the technologies require better accuracy in the OPC models for line-end pull-back and corner rounding. New techniques are becoming available from metrology tool manufacturers to produce GDSII contours of shapes from wafers and modeling software has been improved to use these contours. The challenges of implementing contour generation from the SEM tools will be discussed including calibration methods, physical dimensions, algorithm derivations, and contour registration, resolution, scan direction, and parameter space coverage.

Citation Download Citation

Daniel Fischer, Geng Han, James Oberschmidt, Yong Wah Cheng, Jae Yeol Maeng, Charles Archie, Wei Lu, and Cyrus Tabery "Challenges of implementing contour modeling in 32nm technology", Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 69220A (22 March 2008); https://doi.org/10.1117/12.775444

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