Calibration of CD-SEM: moving from relative to absolute measurements

S. Babin; S. Borisov; A. Ivanchikov; I. Ruzavin

doi:10.1117/12.775104

24 March 2008 Calibration of CD-SEM: moving from relative to absolute measurements

S. Babin, S. Borisov, A. Ivanchikov, I. Ruzavin

Proceedings Volume 6922, Metrology, Inspection, and Process Control for Microlithography XXII; 69222M (2008) https://doi.org/10.1117/12.775104
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

CD-SEM measurement of linewidth, while providing good relative results, is not completely accurate. The measurements involve significant bias of the SEM signal at line edges. The bias varies depending on the SEM setup, the materials and profiles of patterns on the wafer, as well as charging. Existing methods of CD-SEM calibration are extremely limited, only being available for specific samples and materials. In this paper, simulations of SEM signal were carried out using advanced Monte Carlo models of electron interactions with samples. The linewidth was simulated for a variety of pattern materials and SEM setups. The corresponding linewidths were extracted. A CD bias was determined for each type of measurement. When a 3D pattern is exactly known in simulation, the SEM signal can be related to the pattern; then the bias can be found for any combination of SEM patterns. This has the potential to greatly improve CDSEM accuracy, toward the goal of absolute linewidth measurements.

Citation Download Citation

S. Babin, S. Borisov, A. Ivanchikov, and I. Ruzavin "Calibration of CD-SEM: moving from relative to absolute measurements", Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 69222M (24 March 2008); https://doi.org/10.1117/12.775104

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