Paper
26 March 2008 Spectroscopic ellipsometer for ultra thin film
Kumiko Akashika, Shuji Shiota, Shinji Yamaguchi, Masahiro Horie, Masayoshi Kobayashi
Author Affiliations +
Abstract
As semiconductor technology has advanced, the films have become thinner and changed to multi-layer films, such as gate dielectric construction. To deal with these trends, we are continuing development of our spectroscopic ellipsometer with elliptical polarization. We chose a Rotating-Analyzer Ellipsometer (RAE) configuration. The incident light in this type of device is usually polarized linearly, because polarizers do not disperse the light. But the incident light in the ellipsometer described in this paper is elliptical, which has a nearly circular polarization. In this paper, we introduce a technique for solving the dispersion problem.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kumiko Akashika, Shuji Shiota, Shinji Yamaguchi, Masahiro Horie, and Masayoshi Kobayashi "Spectroscopic ellipsometer for ultra thin film", Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 69223M (26 March 2008); https://doi.org/10.1117/12.772414
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Thin films

Spectroscopy

Semiconductors

Spectroscopes

Ultraviolet radiation

Light

Light sources

Back to Top