EUV resist development in Selete

Daisuke Kawamura; Koji Kaneyama; Shinji Kobayashi; Julius Joseph S. Santillan; Toshiro Itani

doi:10.1117/12.771858

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4 April 2008 EUV resist development in Selete

Daisuke Kawamura, Koji Kaneyama, Shinji Kobayashi, Julius Joseph S. Santillan, Toshiro Itani

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Proceedings Volume 6923, Advances in Resist Materials and Processing Technology XXV; 692313 (2008) https://doi.org/10.1117/12.771858
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

The main development issue regarding EUV resist has been how to concurrently achieve high sensitivity, high resolution, and low line width roughness (LWR). This paper describes the current status of EUV resist development at Selete with a small field exposure tool (SFET). Selete standard resist 2 (SSR2) can simultaneously resolve 26-nm dense and isolated lines with the SFET. Our top data for resolution with annular illumination shows a 25-nm half-pitch. In evaluating resist performance, resist blur should be estimated separately from exposure tool fluctuations. By considering the aberration, flare, and actual illumination shape, resist blur can be estimated more accurately. We estimate the resist blur for SSR2 to be between 9.5 and 10.4 nm as sigma of the Gaussian convolution. We also present benchmarking results for suppliers' samples. Though sensitivity has been improved somewhat in some resists, further improvement is necessary. Further reduction of LWR is especially needed.

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Daisuke Kawamura, Koji Kaneyama, Shinji Kobayashi, Julius Joseph S. Santillan, and Toshiro Itani "EUV resist development in Selete", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 692313 (4 April 2008); https://doi.org/10.1117/12.771858

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