High-etch-rate low-bias bow outgassing BARC via-filling materials for 193-nm ArF lithographic process

Huirong Yao; Zhong Xiang; Salem Mullen; Jian Yin; Walter Liu; Jianhui Shan; Elleazar Gonzalez; Guanyang Lin; Mark Neisser

doi:10.1117/12.773400

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15 April 2008 High-etch-rate low-bias bow outgassing BARC via-filling materials for 193-nm ArF lithographic process

Huirong Yao, Zhong Xiang, Salem Mullen, Jian Yin, Walter Liu, Jianhui Shan, Elleazar Gonzalez, Guanyang Lin, Mark Neisser

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Proceedings Volume 6923, Advances in Resist Materials and Processing Technology XXV; 69232J (2008) https://doi.org/10.1117/12.773400
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

As critical dimensions in integrated circuit (IC) device fabrication continue to shrink to less than 90 nm, designing multi-functional organic bottom anti-reflective coating (BARC) materials has become a challenge. In this paper, we report novel high performance BARC materials which are simultaneously capable of controlling reflectivity, planarizing on substrate surface, low bias filling without forming voids, low outgassing, high etch selectivity with resists and broad compatibility with resists. The new materials comprise of a chromophore that absorbs at 193 nm to give anti-reflective properties. By intriguing design of the crosslinking system to minimize the amount of low molecular weight additives and the by-product formation in the curing process, low-bias and low sublimation filling without formation of voids are achieved. In addition, the performance of the high etch rate BARC material can be further enhanced by blending with a low k high etch rate (~2.4X) material to achieve ultra high etch rate for ArF lithographic process. The filling properties, etch selectivity, lithographic and outgassing data of the new BARC materials will be presented.

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Huirong Yao, Zhong Xiang, Salem Mullen, Jian Yin, Walter Liu, Jianhui Shan, Elleazar Gonzalez, Guanyang Lin, and Mark Neisser "High-etch-rate low-bias bow outgassing BARC via-filling materials for 193-nm ArF lithographic process", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69232J (15 April 2008); https://doi.org/10.1117/12.773400

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