Translator Disclaimer
Paper
15 April 2008 High-etch-rate bottom-antireflective coating and gap-fill materials using dextrin derivatives in via first dual-damascene lithography process
Author Affiliations +
Abstract
The present paper describes a novel class of bottom antireflective coating (BARC) and gap fill materials using dextrin derivatives. The general trend of interconnect fabrication for such a high performance LSI is to apply cupper (Cu)/ low-dielectric-constant (low-k) interconnect to reduce RC delay. A via-first dual damascene process is one of the most promising processes to fabricate Cu/ low-k interconnect due to its wide miss-alignment margin. The sacrificial materials containing dextrin derivatives under resist for lithography were developed in via-first dual damascene process. The dextrin derivatives in this study was obtained by the esterification of the hydroxyl groups of dextrin resulting in improved solubility in the resist solvents such as propylene glycol monomethylether, propylene glycol monomethylether acetate, and ethyl lactate due to avoid the issue of defects that were caused by incompatability. The etch rate of our developed BARC and gap fill materials using dextrin derivatives was more than two times faster than one of the ArF resists evaluated in a CF4 gas condition using reactive ion etching. The improved etch performance was also verified by comparison with poly(hydroxystyrene), acrylate-type materials and latest low-k materials as a reference. In addition to superior etch performance, these materials showed good resist profiles and via filling performance without voids in via holes.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Satoshi Takei, Yasushi Sakaida, Tetsuya Shinjo, Keisuke Hashimoto, and Yasuyuki Nakajima "High-etch-rate bottom-antireflective coating and gap-fill materials using dextrin derivatives in via first dual-damascene lithography process", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69232P (15 April 2008); https://doi.org/10.1117/12.771902
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
Back to Top