EUV resist outgassing analysis in Selete

Julius Joseph Santillan; Shinji Kobayashi; Toshiro Itani

doi:10.1117/12.771779

4 April 2008 EUV resist outgassing analysis in Selete

Julius Joseph Santillan, Shinji Kobayashi, Toshiro Itani

Proceedings Volume 6923, Advances in Resist Materials and Processing Technology XXV; 692342 (2008) https://doi.org/10.1117/12.771779
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

To keep in pace with the highly accelerated speed of development of EUV resists, the use of the pressure rise method in the screening of EUV resist outgassing was utilized. This method was used for its advantage of in-situ applicability and evaluation speed (short evaluation time). Both “outgassing rate” [molecules/cm2/s] and “outgassing amount” [molecules/cm2] unit conventions have been obtained. In the conference, an overview of the latest EUV resist outgassing analysis results using various EUV resists (i.e. chemical amplified, PHS, acrelate, high Ea, low Ea, negative-tone, molecular, etc.) will be discussed in detail.

Citation Download Citation

Julius Joseph Santillan, Shinji Kobayashi, and Toshiro Itani "EUV resist outgassing analysis in Selete", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 692342 (4 April 2008); https://doi.org/10.1117/12.771779

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