Coupled-dipole modelling for 3D mask simulation

Vlad Temchenko; Chinteong Lim; Dave Wallis; Jens Schneider; Martin Niehoff

doi:10.1117/12.772572

1 April 2008 Coupled-dipole modelling for 3D mask simulation

Vlad Temchenko, Chinteong Lim, Dave Wallis, Jens Schneider, Martin Niehoff

Proceedings Volume 6924, Optical Microlithography XXI; 69240W (2008) https://doi.org/10.1117/12.772572
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

The growing importance of mask simulation in a low-k1 realm is matched by an increasing need for numerical methods capable of handling complex 3D configurations. Various approximations applied to physical parameters or boundary conditions allowed a few methods to achieve reasonable run-times. In this work the theoretical foundation and simulation results of an alternative 3D mask modeling method suitable for OPC simulations are presented. We have established the throughput and accuracy of the Coupled-Dipole Simulation Method and have compared results to the rigorous FDTD approach using a test pattern. We will discuss in detail possible approximations needed in order to accelerate the method's performance.

Citation Download Citation

Vlad Temchenko, Chinteong Lim, Dave Wallis, Jens Schneider, and Martin Niehoff "Coupled-dipole modelling for 3D mask simulation", Proc. SPIE 6924, Optical Microlithography XXI, 69240W (1 April 2008); https://doi.org/10.1117/12.772572

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