A comprehensive comparison between double patterning and double patterning with spacer on sub-50nm product implementation

C. F. Tseng; C. C. Yang; Elvis Yang; T. H. Yang; K. C. Chen; C. Y. Lu

doi:10.1117/12.769904

7 March 2008 A comprehensive comparison between double patterning and double patterning with spacer on sub-50nm product implementation

C. F. Tseng, C. C. Yang, Elvis Yang, T. H. Yang, K. C. Chen, C. Y. Lu

Author Affiliations +

Proceedings Volume 6924, Optical Microlithography XXI; 69241Y (2008) https://doi.org/10.1117/12.769904
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

In this study, DP (Double Patterning) and DPS (Double Patterning with Spacer) were comprehensively compared through word line layout of 50nm node product, and special focus was put on the assessments of layout discontinuity zones through experimental validation. In conventional flash manufacturing, the lithographic proximity effect and etch loading effect around the array-gap zones have been inherent characteristics to be addressed. For DP process, apart from the overlay error induced pattern displacement and CD non-uniformity, the cross-coupling effects between adjacent features around the array-gap zones by two photo and two etch steps have further complicated the process optimization, therefore careful exploration was carried out to indicate the challenges on process optimization. The DPS can maintain good resultant CD uniformity of dense array through precisely programmed exposure CD and spacer thickness, it may also keep away from the proximity around array-gap zones. But, the second exposure is necessary for trimming the unwanted patterns and delineating the peripheral patterns. In purpose of trimming the unwanted patterns at array-gap zone in the 2nd exposure, the overlay registration will account for the CD control of boundary lines as well as the defectivity around this area.

Citation Download Citation

C. F. Tseng, C. C. Yang, Elvis Yang, T. H. Yang, K. C. Chen, and C. Y. Lu "A comprehensive comparison between double patterning and double patterning with spacer on sub-50nm product implementation", Proc. SPIE 6924, Optical Microlithography XXI, 69241Y (7 March 2008); https://doi.org/10.1117/12.769904

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available