Improving lithography intra wafer CD for C045 implant layers using STI thickness feed forward?

Jean Massin; Bastien Orlando; Maxime Gatefait; Jean-Damien Chapon; Bertrand Le-Gratiet; Blandine Minghetti; Pierre-Jérôme Goirand

doi:10.1117/12.775708

7 March 2008 Improving lithography intra wafer CD for C045 implant layers using STI thickness feed forward?

Jean Massin, Bastien Orlando, Maxime Gatefait, Jean-Damien Chapon, Bertrand Le-Gratiet, Blandine Minghetti, Pierre-Jérôme Goirand

Author Affiliations +

Proceedings Volume 6924, Optical Microlithography XXI; 69244M (2008) https://doi.org/10.1117/12.775708
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

In this paper we performed an analysis of various data collection preformed on C045 production lots in order to assess the influence of STI oxide layers on the CD uniformity of implant photolithography layers. Our final purpose is to show whether the DOSE MAPPER^TM software option for interfiled dose correction available on ASML scanners combined with a run-to-run feed-forward regulation loop could improve global CD uniformity on C045 implants layers. After a brief presentation of the C045 implants context the results of the analysis are presented : swing curves, process windows analysis, and intra-die CD measurements are presented. The conclusion of the analysis is that it is not possible, in the current C045 industrial environment, to use a robust and general method of interfield dose correction in order to achieve a better global CD uniformity.

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Jean Massin, Bastien Orlando, Maxime Gatefait, Jean-Damien Chapon, Bertrand Le-Gratiet, Blandine Minghetti, and Pierre-Jérôme Goirand "Improving lithography intra wafer CD for C045 implant layers using STI thickness feed forward?", Proc. SPIE 6924, Optical Microlithography XXI, 69244M (7 March 2008); https://doi.org/10.1117/12.775708

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