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1 May 2008 Infrared imaging arrays based on superlattice photodiodes
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Abstract
We report on the status of focal plane arrays (FPAs) based on GaSb/InAs type-II superlattice diodes grown by molecular beam epitaxy (MBE) and designed for infrared absorption in the 2-5μm and 8-10μm bands. Recent LWIR devices have produced differential resistance-area product greater than 100 Ohmcm2 at 80K with a long wavelength cutoff of approximately 10μm. The measured quantum efficiency of these front-side illuminated devices is close to 25% in the 8-9 μm range. MWIR devices have produced detectivities as high as 8x1013 Jones with a differential resistance-area product greater than 3x107 Ohmcm2 at 80K with a long wavelength cutoff of approximately 3.7μm. The measured quantum efficiency of these front-side illuminated MWIR devices is close to 40% in the 2-3μm range at low temperature and increases to over 60% near room temperature. Initial results on SiO2 and epitaxial-regrowth based passivation techniques are also presented, as well as images from the first lot of 1kx1k MWIR arrays and our latest 256x256 LWIR arrays.
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Cory J. Hill, Alexander Soibel, Sam A. Keo, Jason M. Mumolo, Sarath D. Gunapala, David R. Rhiger, Robert E. Kvaas, and Sean F. Harris "Infrared imaging arrays based on superlattice photodiodes", Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 69400C (1 May 2008); https://doi.org/10.1117/12.783934
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