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15 May 2008 HgCdTe FPAs made by arsenic-ion implantation
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In this paper, we report the fabrication and electro-optical characterization of both long-wavelength (LWIR) and middle-wavelength (MWIR) p-on-n infrared photodiodes in HgCdTe. LWIR and MWIR HgCdTe epitaxial layers were grown by liquid phase and molecular beam epitaxy respectively. p-type doping was obtained by arsenic implantation and n-type doping by indium incorporation during growth. The arsenic concentration profile determined by Secondary Ion Mass Spectroscopy showed multi-component diffusion after Hg post-implant annealing. The process yields an arsenic activation efficiency of around 50%, estimated from MEMSA (Maximum Entropy Mobility Spectrum Analysis) measurements. The damage induced by arsenic implantation into HgCdTe have been examined by transmission electron microscopy (TEM) and suggest the formation of an array of dislocations loops after arsenic implantation. However, after annealing under Hg overpressure, the impact of implantation falls below the sensitivity of the TEM, suggesting that annealing effectively suppresses most of the defects. The p-on-n photodiodes showed low leakage currents (shunt resistance>100 MOhms) and typical RoA values comparable to the state of the art (RoA>4000 Ω.cm2 for λc=9.2 μm at 77K). Finally, first results on p-on-n focal plane arrays realized at CEA-LETI will be presented.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. Mollard, G. Destefanis, J. Rothman, N. Baier, S. Bisotto, P. Ballet, J. P. Chamonal, P. Castelein, J. P. Zanatta, M. Tchagaspanian, A. M. Papon, J. P. Barnes, F. Henry, S. Gout, G. Bourgeois, C. Pautet, and P. Fougères "HgCdTe FPAs made by arsenic-ion implantation", Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 69400F (15 May 2008);


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