Paper
1 May 2008 High-speed transparent flexible electronics
Author Affiliations +
Abstract
A high-speed flexible transistor made with an ultrapure carbon nanotube (CNT) solution is reported. The carrier transport layer of the CNT-based flexible transistor is formed at room temperature by dispensing a tiny droplet of an electronics-grade CNT solution. Ultra high field-effect mobility of ~ 48,000 cm2/(V×s) has been demonstrated on a thin-film field effect transistor (TFT). A simple trans-impedance voltage follower circuit was made using the CNT-TFT on a transparency film. The circuit exhibited a high modulation speed of 312 MHz and a large current-carrying capacity beyond 20 mA. The transparency and the sheet resistance of the CNT-film were also characterized at different wavelengths. The ink-jet printing-compatible process would enable mass production of large-area electronic circuits on virtually any desired flexible substrate at low cost and high throughput.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jarrod Vaillancourt, Xuejun Lu, Xuliang Han, Daniel C. Janzen, and Wu-Sheng Shih "High-speed transparent flexible electronics", Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 69403A (1 May 2008); https://doi.org/10.1117/12.777348
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Flexible circuits

Transparency

Transistors

Modulation

Resistance

Thin films

Electronic circuits

Back to Top