Quantum 1/f noise in all-epitaxial metal-semiconductor diodes

Peter H. Handel

doi:10.1117/12.778114

15 April 2008 Quantum 1/f noise in all-epitaxial metal-semiconductor diodes

Peter H. Handel

Proceedings Volume 6949, Terahertz for Military and Security Applications VI; 69490F (2008) https://doi.org/10.1117/12.778114
Event: SPIE Defense and Security Symposium, 2008, Orlando, Florida, United States

Abstract

The physics, the theory and the engineering formulas of 1/f noise in ErAs-based all-epitaxial Schottky diodes are presented in a way related to the general quanum 1/f noise formulas developed by the author and van der Ziel ealier for pn junctions, but with inclusion of the image force contribution of an electron at the metal-semiconductor interface. On this base the phase noise introduced by mixers constructed with the ErAs Schottky diodes was also studied and can now be calculated analytically with the Quantum 1/f effect formulas.

Citation Download Citation

Peter H. Handel "Quantum 1/f noise in all-epitaxial metal-semiconductor diodes", Proc. SPIE 6949, Terahertz for Military and Security Applications VI, 69490F (15 April 2008); https://doi.org/10.1117/12.778114

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