The blue-shift effect of the ion-milling-formed HgCdTe photodiodes

F. X. Zha; J. Shao

doi:10.1117/12.792273

11 March 2008 The blue-shift effect of the ion-milling-formed HgCdTe photodiodes

F. X. Zha, J. Shao

Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69840G (2008) https://doi.org/10.1117/12.792273
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China

Abstract

Ion milling-formed n-on-p diodes of HgCdTe were studied by photoluminescence spectroscopy. A sequence of spectra measured across a square junction show that the luminescence peaks of the ion-eroded region shifted strongly to shorter wavelength than those defined by monolithic material. This shift may be well interpreted in terms of Burstein-Moss (BM) effect and is important to device fabrication.

Citation Download Citation

F. X. Zha and J. Shao "The blue-shift effect of the ion-milling-formed HgCdTe photodiodes", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69840G (11 March 2008); https://doi.org/10.1117/12.792273

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