Annealing effects on exciton localization in GaNAs/GaAs epilayer

Z. L. Liu; P. P. Chen; L. L. Ma; C. Wang; J. Shao; X. S. Chen; W. Lu

doi:10.1117/12.792370

11 March 2008 Annealing effects on exciton localization in GaNAs/GaAs epilayer

Z. L. Liu, P. P. Chen, L. L. Ma, C. Wang, J. Shao, X. S. Chen, W. Lu

Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69840Z (2008) https://doi.org/10.1117/12.792370
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China

Abstract

Rapid thermal annealing effects on GaNAs/GaAs epilayer with about 1.0% N are experimentally analyzed. Both the as-grown and annealed samples are studied by photoluminescence at different temperature (11K~290K). Exciton localization and delocalization are investigated in detail. It exhibits quite different optical properties for the localized and delocalized excitons before and after annealing, this is attributed to the nitrogen reorganization inside the GaNAs layer, which homogenizes initial nitrogen composition fluctuations present in the as-grown alloy.

Citation Download Citation

Z. L. Liu, P. P. Chen, L. L. Ma, C. Wang, J. Shao, X. S. Chen, and W. Lu "Annealing effects on exciton localization in GaNAs/GaAs epilayer", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69840Z (11 March 2008); https://doi.org/10.1117/12.792370

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