Correlation between crystalline qualities and resistive switching effects of La0.7Sr0.3MnO3 films

Feng Wu; Xiaomin Li; Weidong Yu; Yiwen Zhang; Xun Cao

doi:10.1117/12.792624

11 March 2008 Correlation between crystalline qualities and resistive switching effects of La_0.7Sr_0.3MnO₃ films

Feng Wu, Xiaomin Li, Weidong Yu, Yiwen Zhang, Xun Cao

Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69841J (2008) https://doi.org/10.1117/12.792624
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China

Abstract

In this work, La_0.7Sr_0.3MnO₃ (LSMO) thin films have been prepared on Pt/Ti/SiO₂/Si substrates at different substrate temperatures by pulsed laser deposition (PLD) method. Nonlinear current-voltage (I-V) behavior and the electric-pulse-induced resistance change were observed in all Ag/LSMO/Pt heterostructures. Resistive switching properties exhibit very strong dependences on the film crystalline qualities. Also, models for interpreting the results were also proposed.

Citation Download Citation

Feng Wu, Xiaomin Li, Weidong Yu, Yiwen Zhang, and Xun Cao "Correlation between crystalline qualities and resistive switching effects of La_0.7Sr_0.3MnO₃ films", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69841J (11 March 2008); https://doi.org/10.1117/12.792624

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