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11 March 2008 Photocurrent generated by nanometer silicon crystallites
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Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69842U (2008) https://doi.org/10.1117/12.792368
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
We report on the photocurrent generated by nanometer grains embedded in hydrogenated amorphous silicon (a-Si:H), i.e., the hydrogenated nanocrystalline silicon (nc-Si:H) thin film. The embedded nanometer grains within the a-Si:H boundaries are found to be a narrow continuous energy band in the a-Si:H band-gap, from which the transitions can effectively generate the free electron-hole pairs, resulting in the observed high photocurrent. The high density of nanometer Si crystals is a good means to improve the photo current response, and the fabrication of the low-cost infrared photo detector by a single layer of nc-Si:H thin film on glass substrates is also expected.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Zhang, X. Y. Chen, and W. Z. Shen "Photocurrent generated by nanometer silicon crystallites", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842U (11 March 2008); https://doi.org/10.1117/12.792368
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