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26 April 2008 Optical nonlinear switches based on nanocrystalline silicon: Part II
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Abstract
SHG spectra from silicon films with different average size of nanocrystals were studied as possible material for active channel in nonlinear optical switches. It is seen the spectral peak with energy 3.26 eV is related to defects appeared in interface area silicon-silicon dioxide. For films with small silicon crystals (less than 20 nm) the nonlinear optical response contains two spectral peaks. The second peak is caused by optical response from nanocrystal grain boundary that contains oxygen atoms incorporated in silicon as dipoles inside film. The optical nonlinear switch device based on the nonlinear optical response of SiOx media inside film was proposed. Also, the silicon film with quartz micro-clusters was investigated as material for making the nonlinear optical transmitter device. The PL spectra of films were, also, studied to observe the various silicon and silicon dioxide fractions. The efficiency of transmission of radiation is sufficient.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Milovzorov "Optical nonlinear switches based on nanocrystalline silicon: Part II", Proc. SPIE 6988, Nanophotonics II, 69881G (26 April 2008); https://doi.org/10.1117/12.779699
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