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25 April 2008 Micromachining of InP/InGaAs multiple membrane/airgap structures for tunable optical devices
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Abstract
InP based tunable optical MEMS devices, such as Fabry-Perot filters, VCSELs, photodiodes, consist of two distributed Bragg reflectors (DBRs) and a cavity. Tuning of the filter wavelength is achieved by electrostatic actuation of the two DBRs which are p-doped and n-doped, respectively, and reversely biased. The cavity and the DBRs consist of a stress compensated InP/airgap structure which is fabricated by sacrificial layer removal, using FeCl3 wet etching of InGaAs layers. In this work we investigated the influence of p-and n-type conductivity on the etching process. We observed that the sacrificial layer etch rate of n-InGaAs is 7 times slower than the p-InGaAs. This influences the stress in the n-DBR section of the tunable device. Based on these results novel wavelength tunable optical devices with multiple InP membrane/airgap structures will be designed.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Kusserow, S. Ferwana, T. Nakamura, T. Hayakawa, N. Dharmarasu, B. Vengatesan, and H. Hillmer "Micromachining of InP/InGaAs multiple membrane/airgap structures for tunable optical devices", Proc. SPIE 6993, MEMS, MOEMS, and Micromachining III, 69930B (25 April 2008); https://doi.org/10.1117/12.781359
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