Translator Disclaimer
Paper
26 April 2008 BiCMOS phototransistors
Author Affiliations +
Abstract
In this work we present experimental results of silicon-only bipolar phototransistors fabricated in a 0.35μm commercial BiCMOS technology without process modifications. The transistors are characterized over a wide optical spectral range at 410nm, 675nm, 785nm, and 850nm, providing significantly improved -3dB bandwidths up to 390MHz @ 410nm light and responsivities of 1.76A/W @ 675nm corresponding to quantum efficiencies of 359% normalized in terms of the quantum efficiency of a silicon photodiode.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Artur Marchlewski and Horst Zimmermann "BiCMOS phototransistors", Proc. SPIE 7003, Optical Sensors 2008, 70030J (26 April 2008); https://doi.org/10.1117/12.760388
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
Back to Top