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15 July 2008 The point spread function of silicon pore x-ray optics
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It is proposed that the primary mirror for the X-ray observatory XEUS has an angular resolution of ~2 arc seconds, and is constructed using a new type of pore optics manufactured from Silicon. The point spread function of such optics results from the summed effect of millions of pores and is limited by a combination of geometrical optics, diffraction and scattering. In the case of XEUS, all three effects are of importance, as diffraction dominates at lower energies. Reaching this ambitious resolution goal is a major challenge of the mission. We present analytical and numerical calculations which provide a prediction of the point spread function including inherent geometric and diffraction effects associated with the pore geometry, manufacturing/figuring errors, misalignments and surface roughness. The rough reflecting surface of one pore is modelled as a number of planar patches. The wave fronts reflected from these patches are propagated to the detector plane, taking into account geometrical and diffraction effects over the whole energy range. Summation of these wave fronts gives us a general analytical point spread function for a pore. In a computationally intensive step numerical values are then applied and the point spread function calculated. First results are shown for one pore and in one dimension (radially).
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Frank H. P. Spaan and Richard Willingale "The point spread function of silicon pore x-ray optics", Proc. SPIE 7011, Space Telescopes and Instrumentation 2008: Ultraviolet to Gamma Ray, 70111B (15 July 2008);


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