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16 July 2008Teledyne Imaging Sensors: silicon CMOS imaging technologies for x-ray, UV, visible, and near infrared
Teledyne Imaging Sensors develops and produces high performance silicon-based CMOS image sensors, with associated
electronics and packaging for astronomy and civil space. Teledyne's silicon detector sensors use two technologies:
monolithic CMOS, and silicon PIN hybrid CMOS. Teledyne's monolithic CMOS sensors are large (up to 59 million
pixels), low noise (2.8 e- readout noise demonstrated, 1-2 e- noise in development), low dark current (<10 pA/cm2 at
295K) and can provide in-pixel snapshot shuttering with >103 extinction and microsecond time resolution. The QE
limitation of frontside-illuminated CMOS is being addressed with specialized microlenses and backside illumination. A
monolithic CMOS imager is under development for laser guide star wavefront sensing. Teledyne's hybrid silicon PIN
CMOS sensors, called HyViSITM, provide high QE for the
x-ray through near IR spectral range and large arrays
(2K×2K, 4K×4K) are being produced with >99.9% operability. HyViSI dark current is 5-10 nA/cm2 (298K), and further reduction is expected from ongoing development. HyViSI presently achieves <10 e- readout noise, and new high speed
HyViSI arrays being produced in 2008 should achieve <4 e- readout noise at 900 Hz frame rate. A Teledyne 640×480
pixel HyViSI array is operating in the Mars Reconnaissance Orbiter, a 1K×1K HyViSI array will be launched in 2008 in
the Orbiting Carbon Observatory, and HyViSI arrays are under test at several astronomical observatories. The
advantages of CMOS in comparison to CCD include programmable readout modes, faster readout, lower power,
radiation hardness, and the ability to put specialized processing within each pixel. We present one example of in-pixel
processing: event driven readout that is optimal for lightning detection and x-ray imaging.
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Yibin Bai, Jagmohan Bajaj, James W. Beletic, Mark C. Farris, Atul Joshi, Stefan Lauxtermann, Anders Petersen, George Williams, "Teledyne Imaging Sensors: silicon CMOS imaging technologies for x-ray, UV, visible, and near infrared," Proc. SPIE 7021, High Energy, Optical, and Infrared Detectors for Astronomy III, 702102 (16 July 2008); https://doi.org/10.1117/12.792316