Formation of thin ZrO2 layers for nanotransistor gate structures by electron beam evaporation

D. G. Drozdov; I. A. Khorin; V. B. Kopylov; A. A. Orlikovsky; A. E. Rogozhin; A. G. Vasiliev

doi:10.1117/12.802425

29 April 2008 Formation of thin ZrO2 layers for nanotransistor gate structures by electron beam evaporation

D. G. Drozdov, I. A. Khorin, V. B. Kopylov, A. A. Orlikovsky, A. E. Rogozhin, A. G. Vasiliev

Proceedings Volume 7025, Micro- and Nanoelectronics 2007; 70250Y (2008) https://doi.org/10.1117/12.802425
Event: Micro- and Nanoelectronics 2007, 2007, Zvenigorod, Russian Federation

Abstract

Zirconium oxide (ZrO₂) films have been deposited on cleaned and heated p-type Si (100) substrates by electron-beam evaporation technique. It is shown that the intermediate SiO₂ layer on ZrO₂/Si interface is absence. The W/YSZ/Si and Mo/YSZ/Si structures with 3÷20-nm-thick dielectric layers were formed by electron-beam evaporation technique. The fixed charge densities in 3-nm-thick YSZ layers are 3x10¹⁰ - 3.7x10¹⁰cm², leakage current density at a voltage -1V achieves ~7,9•10^-7Α/cm².

Citation Download Citation

D. G. Drozdov, I. A. Khorin, V. B. Kopylov, A. A. Orlikovsky, A. E. Rogozhin, and A. G. Vasiliev "Formation of thin ZrO2 layers for nanotransistor gate structures by electron beam evaporation", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70250Y (29 April 2008); https://doi.org/10.1117/12.802425

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available