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19 May 2008 Modeling of charging effect and its correction by EB mask writer EBM-6000
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Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 70280C (2008) https://doi.org/10.1117/12.793020
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan
Abstract
The impending need of double patterning/double exposure techniques is accelerating the demand for higher pattern placement accuracy to be achieved in the upcoming lithography generations. One of the biggest error sources of pattern placement accuracy on an EB mask writer is the resist charging effect. In this paper, we provide a model to describe the resist charging behavior on a photomask written on our EBM-6000 system. We found this model was very effective in correcting and reducing the beam position error induced by the charging effect.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Noriaki Nakayamada, Seiji Wake, Takashi Kamikubo, Hitoshi Sunaoshi, and Shuichi Tamamushi "Modeling of charging effect and its correction by EB mask writer EBM-6000", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70280C (19 May 2008); https://doi.org/10.1117/12.793020
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