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19 May 2008 Damage analysis of EUV mask under Ga focused ion beam irradiation
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Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 70280J (2008) https://doi.org/10.1117/12.793026
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan
Abstract
EUV mask damage caused by Ga focused ion beam irradiation during the mask defect repair was studied. The concentration of Ga atom implanted in the multilayer through the buffer layer was calculated by SRIM. The reflectivity of the multilayer was calculated from the Ga distribution below the capping layer surface. To validate the calculation, a multilayer sample was irradiated with Ga FIB, and then EUV reflectivity was measured. The measured reflectivity change was in good agreement with the calculated value. An aerial image of patterns with Ga implanted region was simulated. The impact of the estimated Ga absorption on the linewidth of 32 nm hp line pattern was found to be less than 1 nm.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasushi Nishiyama, Tsuyoshi Amano, Hiroyuki Shigemura, Tsuneo Terasawa, Osamu Suga, Tomokazu Kozakai, Syuichi Kikuchi, Kensuke Shiina, Anto Yasaka, and Ryoji Hagiwara "Damage analysis of EUV mask under Ga focused ion beam irradiation", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70280J (19 May 2008); https://doi.org/10.1117/12.793026
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