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19 May 2008 Model-based mask verification on critical 45nm logic masks
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Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 70280U (2008) https://doi.org/10.1117/12.793037
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan
Abstract
In the continuous battle to improve critical dimension (CD) uniformity, especially for 45-nanometer (nm) logic advanced products, one important recent advance is the ability to accurately predict the mask CD uniformity contribution to the overall global wafer CD error budget. In most wafer process simulation models, mask error contribution is embedded in the optical and/or resist models. We have separated the mask effects, however, by creating a short-range mask process model (MPM) for each unique mask process and a long-range CD uniformity mask bias map (MBM) for each individual mask. By establishing a mask bias map, we are able to incorporate the mask CD uniformity signature into our modelling simulations and measure the effects on global wafer CD uniformity and hotspots. We also have examined several ways of proving the efficiency of this approach, including the analysis of OPC hot spot signatures with and without the mask bias map (see Figure 1) and by comparing the precision of the model contour prediction to wafer SEM images. In this paper we will show the different steps of mask bias map generation and use for advanced 45nm logic node layers, along with the current results of this new dynamic application to improve hot spot verification through Brion Technologies' model-based mask verification loop.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
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