Extension of the 2D-TCC technique to optimize mask pattern layouts

Manabu Hakko; Kenji Yamazoe; Miyoko Kawashima; Yoshiyuki Sekine; Masakatsu Ohta; Tokuyuki Honda

doi:10.1117/12.793041

19 May 2008 Extension of the 2D-TCC technique to optimize mask pattern layouts

Manabu Hakko, Kenji Yamazoe, Miyoko Kawashima, Yoshiyuki Sekine, Masakatsu Ohta, Tokuyuki Honda

Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 70280Z (2008) https://doi.org/10.1117/12.793041
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan

Abstract

The extendibility of 2D-TCC technique to an isolated line of 45 nm width is investigated in this paper. The 2D-TCC technique optimizes mask patterns placing assist pattern automatically. For 45 nm line patterns, the assist pattern width generally becomes much smaller than the exposure wavelength of 193 nm. Thus, the impact of the topography of a mask is examined using an electro-magnetic field (EMF) simulation. This simulation indicates that unwanted assist pattern printings are brought about by assist patterns with a smaller size than expected by the Kirchhoff's approximation. The difference, however, can be easily solved by giving a bias to the main pattern in the optimized mask. The main pattern bias decreases DOF very little. Furthermore, DOF simulated with a thick mask model is roughly the same as that simulated with a thin mask model. Therefore the topography of the optimized mask does not have an influence on the assist pattern position of the optimized mask. From these results, we have confirmed that the 2D-TCC technique can be extended to the optimization of 45 nm line patterns. As one of the notable features, the optimized aperiodic assist pattern greatly reduces MEEF compared with the conventional periodic assist pattern. To verify the feasibility of the 2D-TCC technique for 45 nm line, we performed experiment with an optimized mask. Experimental results showed that DOF increased with the number of assist pattern as simulation indicated. In addition, a defect whose length was twice that of the assist pattern did not have an influence on CD. From these results we have confirmed that the 2D-TCC technique can enhance the resolution of 45 nm line and has practical feasibility.

Citation Download Citation

Manabu Hakko, Kenji Yamazoe, Miyoko Kawashima, Yoshiyuki Sekine, Masakatsu Ohta, and Tokuyuki Honda "Extension of the 2D-TCC technique to optimize mask pattern layouts", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70280Z (19 May 2008); https://doi.org/10.1117/12.793041

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