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19 May 2008 Prevention of chemical residue from growing into Haze defect on PSM pattern edge after normal cleaning process
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Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 702818 (2008) https://doi.org/10.1117/12.793049
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan
Abstract
It is known that PSM pattern edge (MoSiON/Qz boundary) of EA-PSM mask is the weakest point against Haze occurrence in real mass production. Based on the understanding of these phenomena, we have developed very efficient ways to protect PSM pattern edge from Haze defect formation even after normal SPM cleaning processes. Oxide layer formulated on the PSM pattern (including pattern top and side) is actively trapping chemical ions existing on the surface and inside bulk of mask substrate, preventing their motion or diffusion toward Haze defect creation during laser exposure. As a result, we are able to reduce cleaning frequency of each EA-PSM mask set without Haze issues and thereby dramatically expand their life time in real mass production.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jaehyuck Choi, Jin-sik Jung, Han-shin Lee, Jongkeun Oh, Soojung Kang, Haeyong Jeong, Yonghoon Kim, and HanKu Cho "Prevention of chemical residue from growing into Haze defect on PSM pattern edge after normal cleaning process", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 702818 (19 May 2008); https://doi.org/10.1117/12.793049
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