Paper
19 May 2008 Registration measurement capability of VISTEC LMS IPRO4 with focus on small features
Christian Enkrich, Gunter Antesberger, Oliver Loeffler, Klaus-Dieter Roeth, Frank Laske, Karl-Heinrich Schmidt, Dieter Adam
Author Affiliations +
Abstract
The development of the 45-nm node manufacturing process at leading edge mask shops is nearly finished. In order to reach the required registration measurement performance with a precision to tolerance value of P/T=0.25, the measurement error may not exceed 1.2 nm according to ITRS roadmap. This requires the latest generation of registration measurement tools. In addition, the demand for measuring very small features increases - for standard pattern placement measurements, as well as special engineering tasks, e.g., the position measurement of single contact holes. In this work, the error of pattern placement measurement on an LMS IPRO4 is determined using an analysis of variance methodology (ANOVA). In addition we analyze the capability as a function of the critical dimension (CD) of the registration feature. The results are compared to the previous tool generation.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christian Enkrich, Gunter Antesberger, Oliver Loeffler, Klaus-Dieter Roeth, Frank Laske, Karl-Heinrich Schmidt, and Dieter Adam "Registration measurement capability of VISTEC LMS IPRO4 with focus on small features", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70282Y (19 May 2008); https://doi.org/10.1117/12.793104
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CITATIONS
Cited by 8 scholarly publications.
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KEYWORDS
Image registration

Error analysis

Metrology

Photomasks

Cadmium

Critical dimension metrology

Reticles

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