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19 May 2008 Mask process effect aware OPC modeling
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Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 70283E (2008)
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan
Although the mask pattern created by fine ebeam writing is four times larger than the wafer pattern, the mask proximity effect from ebeam scattering and etch is not negligible. This mask proximity effect causes mask-CD errors and consequently wafer-CD errors after the lithographic process. It is therefore necessary to include the mask proximity effect in optical proximity correction (OPC). Without this, an OPC model can not predict the entire lithography process correctly even using advanced optical and resist models. In order to compensate for the mask proximity effect within OPC a special model is required along with changes to the OPC flow. This article presents a method for producing such a model and OPC flow and shows the difference in results when they are used.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kyoil Koo, Sooryong Lee, Jason Hwang, Daniel Beale, Matt St. John, Robert Lugg, Seunghee Baek, Munhoe Do, Junghoe Choi, Youngchang Kim, and Minjong Hong "Mask process effect aware OPC modeling", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70283E (19 May 2008);


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